
T
T
T
S
S
S
1
1
1
2
2
2
8
8
8
M
M
M
L
L
L
D
D
D
6
6
6
4
4
4
V
V
V
4
4
4
J
J
J
184PIN DDR400 Unbuffered DIMM
1024MB With 64Mx8 CL3
Transcend Information Inc.
8
Parameter Symbol Min Max Unit Note
Row cycle time tRC
55 ns
Refresh row cycle time tRFC
70 ns
Row active time tRAS
40 70K ns
/RAS to /CAS delay tRCD
15 ns
Row active to Row active delay tRP
15 ns
Row active to Row active delay tRRD
10 ns
Write recovery time tWR
15 ns
Last data in to Read command tWTR
2 tCK
Clock cycle time tCK
5 10 ns 16
Clock high level width tCH
0.45 0.55 tCK
Clock low level width tCL
0.45 0.55 tCK
DQS-out access time from CK /CK tDQSCK
-0.55 0.55 ns
Output data access time from CK /CK tAC
-0.65 0.65 ns
Data strobe edge to output data edge tDQSQ
0.4 ns 13
Read Preamble tRPRE
0.9 1.1 tCK
Read Postamble tRPST
0.4 0.6 tCK
CK to valid DQS-in tDQSS
0.72 1.28 tCK
Write preamble setup time tWPRES
0 ps 5
Write preamble tWPRE
0.25 tCK
Write postamble tWPST
0.4 0.6 tCK 4
DQS falling edge to CK rising-setup time tDSS
0.2 tCK
DQS falling edge from CK rising-hold time tDSH
0.2 tCK
DQS-in high level width tDQSH
0.35 tCK
DQS-in low level width tDQSL
0.35 tCK
Address and Control input setup time tIS
0.6 ns 7~10
Address and Control input hold time tIH 0.6
ns 7~10
Data-out high-impedance time from CK, /CK tHZ - tAC max
ns 3
Data-out low-impedance time from CK, /CK tLZ tAC min
tAC max ns 3
Mode register set cycle time tMRD 2
ns
DQ & DM setup time to DQS tDS 0.4
ns
DQ & DM hold time to DQS tDH 0.4
ns
DQ & DM input pulse width tDIPW 1.75
ns 9
Control &Address input pulse width for each input tIPW 2.2 ns 9
Refresh interval time tREF 7.8
us 6
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