Transcend TS16MED3260V Arkusz Danych

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64MB 72 PIN EDO
DRAM SIMM With 16Mx4 3.3VOLT
Description
The TS16MED3260V is a 16M by 32-bit dynamic
RAM module with 8pcs of 16Mx4 DRAMs
assembled on the printed circuit board.
The TS16MED3260V is optimized for application to
systems which require high density and large
capacity along with compact sizing.
Features
16,777,216 word by 32-bit organization.
Fast Page Mode with Extended Data Out.
Single +3.3V ± 10% power supply.
4,096 cycles refresh.
Transcend Information Inc.
Lower power consumption.
CAS before RAS refresh, RAS only refresh,
Hidden refresh, Fast Page Mode with EDO
Read_Modify_Write capability.
TS16MED3260V
Access Time from/RAS
tRAC
60ns
Access time from/CAS
tCAC
15ns
Random read/write cycle tome
tRC
104ns
Hyper page mode cycle time
tHPC
25ns
PRESENCE DETECT PINS (Optional)
Dimensions
Side Millimeters Inches
A 107.95 ± 0.400 4.250 ± 0.016
B 101.19 3.984
C 44.4500 1.750
D 6.3500 0.250
E 2.03 0.080
F 6.35000 0.250000
G 29.20 ± 0.20 1.150 ± 0.008
H 10.16 0.400
I 6.35 0.250
J 1.27 ± 0.10 0.050 ± 0.004
(Refer Placement)
Pin Identification
Symbol Function
A0~A11
System Address inputs
D0 ~ D31
Common data inputs/outputs
/RAS0, /RAS2
System Row address strobes
/CAS0~/CAS3
System column address strobes
/WE
System Write enable
Vss
Ground
VDD
+5 voltage power supply
NC
No Connection
PD1~PD4
Presence detection pin
PIN 60NS
PD1
PD2
PD3
PD4
Vss
NC
NC
NC
(Refer Block Diagram)
1
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Podsumowanie treści

Strona 1

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Description The TS16MED3260V is a 16M by 32-bit dynamic RAM module

Strona 2 - Placement:

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 10

Strona 3 - Pinouts:

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 11

Strona 4

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 12

Strona 5

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 13

Strona 6

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 14

Strona 7

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 15

Strona 8

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 16

Strona 9

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 17

Strona 10 - DRAM SIMM With 16Mx4 3.3VOLT

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 18

Strona 11

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Placement: IABFFEGHJCCD Transcend Information Inc. 2

Strona 12

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Pinouts: Pin No Pin Name Pin No Pin Name Pin No Pin NamePin No Pi

Strona 13

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT TS16MED3260V-- Block Diagram A0~A11DQ0~DQ3/RAS/CAS/WE/OE16Mx4DRA

Strona 14

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT ABSOLUTE MAXIMUM RATINGS* Item Symbol Rating Unit Voltage on any

Strona 15

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT DC AND OPERATION CHARACTERISTICS (Recommended operationg condition

Strona 16

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT CAPACITANCE (TA = 25°C, Vcc = 3.3V, f = 1MHz) Item Symbol Min M

Strona 17

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT AC CHARACTERISTICS (0℃≦TA≦70℃, Vcc=3.3V±10%, See notes 1, 2) Test

Strona 18

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT /RAS pulse width (Hyper page cycle) tRASP 60 200K ns /W to /RAS

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